Fully solution-processed low-voltage aqueous In2O3 thin-film transistors using an ultrathin ZrOx dielectric

ACS Applied Materials and Interfaces

Volumn 6, Issue 20, 2014, Pages 17364-17369

  Liu, Ao ^a   Liu, Guo Xia ^a   Zhu, Hui Hui ^a   Xu, Feng ^a   Fortunato, Elvira ^b   Martins, Rodrigo ^b   Shan, Fu Kai ^a  

^a QINGDAO UNIVERSITY   (China)

^b UNINOVA   (Portugal)

Author keywords

aqueous solution process; indium oxide; low temperature process; thin film transistor; ultrathin zirconium oxide

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; ELECTRIC FIELDS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; LEAKAGE CURRENTS; POWER TRANSISTORS; TEMPERATURE; THERMOGRAVIMETRIC ANALYSIS; THIN FILM CIRCUITS; THIN FILM TRANSISTORS; THIN FILMS; THRESHOLD VOLTAGE; ZIRCONIUM COMPOUNDS;

ANNEALING TEMPERATURES; FIELD-EFFECT MOBILITIES; INDIUM OXIDE; LOW OPERATING VOLTAGE; LOW TEMPERATURE PROCESSING; LOW- TEMPERATURE PROCESS; LOW-TEMPERATURE THERMAL ANNEALING; ULTRA-THIN;

INDIUM COMPOUNDS;

EID: 84908176167     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am505602w     Document Type: Article

References (29)

1. Nomura, K.; Ohta, H.; Takagi, A.; Kamiya, T.; Hirano, M.; Hosono, H. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors Nature 2004, 432, 488-492
2. Fortunato, E.; Barquinha, P.; Martins, R. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances Adv. Mater. 2012, 24, 2945-2986
3. Fujii, M.; Ishikawa, Y.; Ishihara, R.; van der Cingel, J.; Mofrad, M. R.; Horita, M.; Uraoka, Y. Low temperature high-mobility InZnO thin-film transistors fabricated by excimer laser annealing Appl. Phys. Lett. 2013, 102, 122107 (1-4)
4. 5 dielectrics fabricated at room temperature Appl. Phys. Lett. 2009, 95, 072112 (1-3)
5. Hwang, Y. H.; Seo, J.-S.; Yun, J. M.; Park, H.; Yang, S.; Park, S.-H. K.; Bae, B.-S. An 'aqueous route' for the fabrication of low-temperature-processable oxide flexible transparent thin-film transistors on plastic substrates NPG Asia Mater. 2013, 5, e45-e52
6. Park, J. H.; Yoo, Y. B.; Lee, K. H.; Jang, W. S.; Oh, J. Y.; Chae, S. S.; Lee, H. W.; Han, S. W.; Baik, H. K. Boron-doped peroxo-zirconium oxide dielectric for high-performance, low-temperature, solution-processed indium oxide thin-film transistor ACS Appl. Mater. Interfaces 2013, 5, 8067-8075
7. Song, K.; Yang, W.; Jung, Y.; Jeong, S.; Moon, J. A solution-processed yttrium oxide gate insulator for high-performance all-solution-processed fully transparent thin film transistors J. Mater. Chem. 2012, 22, 21265-21271
8. Banger, K.; Yamashita, Y.; Mori, K.; Peterson, R.; Leedham, T.; Rickard, J.; Sirringhaus, H. Low-temperature, high-performance solution-processed metal oxide thin-film transistors formed by a 'sol-gel on chip' process Nat. Mater. 2010, 10, 45-50
9. Kang, Y. H.; Jeong, S.; Ko, J. M.; Lee, J.-Y.; Choi, Y.; Lee, C.; Cho, S. Y. Two-component solution processing of oxide semiconductors for thin-film transistors via self-combustion reaction J. Mater. Chem. C 2014, 2, 4247-4256
10. Su, B.-Y.; Chu, S.-Y.; Juang, Y.-D.; Chen, H.-C. High-performance low-temperature solution-processed InGaZnO thin-film transistors via ultraviolet-ozone photo-annealing Appl. Phys. Lett. 2013, 102, 192101 (1-4)
11. Han, S.-Y.; Herman, G. S.; Chang, C.-H. Low-temperature, high-performance, solution-processed indium oxide thin-film transistors J. Am. Chem. Soc. 2011, 133, 5166-5169
12. Meyers, S. T.; Anderson, J. T.; Hung, C. M.; Thompson, J.; Wager, J. F.; Keszler, D. A. Aqueous inorganic inks for low-temperature fabrication of ZnO TFTs J. Am. Chem. Soc. 2008, 130, 17603-17609
13. Schneller, T.; Waser, R.; Kosec, M.; Payne, D. Chemical Solution Deposition of Functional Oxide Thin Films; Springer: Berlin, 2010.
14. Choi, K.; Kim, M.; Chang, S.; Oh, T.-Y.; Jeong, S. W.; Ha, H. J.; Ju, B.-K. High-Performance Amorphous Indium Oxide Thin-Film Transistors Fabricated by an Aqueous Solution Process at Low Temperature Jpn. J. Appl. Phys. 2013, 52, 060204 (1-4)
15. 3 thin film transistors using chemically derived aluminum oxide dielectric Appl. Phys. Lett. 2013, 103 (033518) 1-5
16. x dielectric for high-performance InTiZnO thin-film transistors Curr. Appl. Phys. 2014, 14, S39-S43
17. Leppäniemi, J.; Ojanperä, K.; Kololuoma, T.; Huttunen, O.-H.; Dahl, J.; Tuominen, M.; Laukkanen, P.; Majumdar, H.; Alastalo, A. Rapid low-temperature processing of metal-oxide thin film transistors with combined far ultraviolet and thermal annealing Appl. Phys. Lett. 2014, 105, 113514 (1-5)
18. Rim, Y. S.; Lim, H. S.; Kim, H. J. Low-Temperature Metal-Oxide Thin-Film Transistors Formed by Directly Photopatternable and Combustible Solution Synthesis ACS Appl. Mater. Interfaces 2013, 5, 3565-3571
19. 3 dielectric for high performance metal-oxide thin-film transistor J. Mater. Chem. C 2013, 1, 7166-7174
20. 2 gate insulator Phys. Status Solidi (RRL) 2013, 7, 485-488
21. Park, Y. M.; Daniel, J.; Heeney, M.; Salleo, A. Room-Temperature Fabrication of Ultrathin Oxide Gate Dielectrics for Low-Voltage Operation of Organic Field-Effect Transistors Adv. Mater. 2011, 23, 971-974
22. Park, J. H.; Yoo, Y. B.; Lee, K. H.; Jang, W. S.; Oh, J. Y.; Chae, S. S.; Baik, H. K. Low-Temperature, High-Performance Solution-Processed Thin-Film Transistors with Peroxo-Zirconium Oxide Dielectric ACS Appl. Mater. Interfaces 2013, 5, 410-417
23. Jeong, S.; Ha, Y. G.; Moon, J.; Facchetti, A.; Marks, T. J. Role of Gallium Doping in Dramatically Lowering Amorphous-Oxide Processing Temperatures for Solution-Derived Indium Zinc Oxide Thin-Film Transistors Adv. Mater. 2010, 22, 1346-1350
24. Kim, H. S.; Byrne, P. D.; Facchetti, A.; Marks, T. J. High performance solution-processed indium oxide thin-film transistors J. Am. Chem. Soc. 2008, 130, 12580-12581
25. Barquinha, P.; Martins, R.; Fortunato, E., N-Type Oxide Semiconductor Thin-Film Transistors. InGaN and ZnO-based Materials and Devices; Springer: Berlin, 2012; pp 435-476.
26. Jung, H. Y.; Kang, Y.; Hwang, A. Y.; Lee, C. K.; Han, S.; Kim, D.-H.; Bae, J.-U.; Shin, W.-S.; Jeong, J. K. Origin of the improved mobility and photo-bias stability in a double-channel metal oxide transistor Sci. Rep. 2014, 4, 3765-3772
27. Jeong, J. K.; Yang, H. W.; Jeong, J. H.; Mo, Y.-G.; Kim, H. D. Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors Appl. Phys. Lett. 2008, 93, 123508 (1-3)
28. 3 α-InGaZnO Thin-Film Transistors IEEE Electron Device Lett. 2014, 35, 66-68
29. x dielectric Appl. Phys. Lett. 2014, 105, 113509 (1-5)