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Volumn 52, Issue 6 PART 1, 2013, Pages

High-performance amorphous indium oxide thin-film transistors fabricated by an aqueous solution process at low temperature

(7) Choi, Kookhyun a Kim, Minseok a Chang, Seongpil a Oh, Tae Yeon a Jeong, Shin Woo a Ha, Hyeon Jun a Ju, Byeong Kwon a

a Korea University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS INDIUM-OXIDE; ANNEALING TEMPERATURES; ELECTRICAL CHARACTERISTIC; ELECTRICAL PERFORMANCE; FABRICATION TECHNIQUE; ON/OFF CURRENT RATIO; SATURATION MOBILITY; THIN-FILM TRANSISTOR (TFTS);

ANNEALING; INDIUM; TEMPERATURE; THIN FILM TRANSISTORS;

SOLUTIONS;

EID: 84881084061 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.7567/JJAP.52.060204 Document Type: Article

Times cited : (19)

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