High-performance In-Zn-O thin-film transistors with a soluble processed ZrO2 gate insulator

Physica Status Solidi - Rapid Research Letters

Volumn 7, Issue 7, 2013, Pages 485-488

  Son, Byeong Geun ^a   Je, So Yeon ^a   Kim, Hyo Jin ^a   Lee, Chul Kyu ^a   Lee, Chang Kyu ^a   Hwang, Ah Young ^a   Won, Ju Yeon ^a   Song, Ji Hun ^a   Choi, Rino ^a   Jeong, Jae Kyeong ^a  

^a Inha University   (South Korea)

Author keywords

Indium zinc oxide; Spin coating; Thin film transistors; ZrO2

Indexed keywords

BACKPLANE ELECTRONICS; GATE LEAKAGE CURRENT DENSITY; HIGH FIELD EFFECT MOBILITY; HIGH-CRYSTALLINE QUALITY; HIGH-K DIELECTRIC; INDIUM ZINC OXIDES; THIN-FILM TRANSISTOR (TFTS); ZRO2;

ELECTRIC FIELDS; GATE DIELECTRICS; OXIDE FILMS; SPIN COATING; ZIRCONIUM ALLOYS;

THIN FILM TRANSISTORS;

EID: 84880514166     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.201307128     Document Type: Article

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