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Current Applied Physics

Volumn 14, Issue SUPPL. 1, 2014, Pages

Room-temperature fabrication of ultra-thin ZrOx dielectric for high-performance InTiZnO thin-film transistors

(8) Liu, A a Liu, G X a Shan, F K a,b Zhu, H H a Xu, S a Liu, J Q a Shin, B C b Lee, W J b

a QINGDAO UNIVERSITY (China)

b Dong Eui University (South Korea)

Author keywords

In Ti Zn O thin film; Thin film transistor

Indexed keywords

GATE DIELECTRICS; SEMICONDUCTING ORGANIC COMPOUNDS; SOL-GEL PROCESS; THIN FILM TRANSISTORS; ZINC;

ENHANCEMENT MODES; FIELD-EFFECT MOBILITIES; ON/OFF CURRENT RATIO; ROOM TEMPERATURE; SUBTHRESHOLD SWING; THIN-FILM TRANSISTOR (TFTS); ULTRA-THIN; ULTRAVIOLET IRRADIATIONS;

ZIRCONIUM ALLOYS;

EID: 84899461271 PISSN: 15671739 EISSN: None Source Type: Journal
DOI: 10.1016/j.cap.2013.11.045 Document Type: Article

Times cited : (32)

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