High-performance low-temperature solution-processed InGaZnO thin-film transistors via ultraviolet-ozone photo-annealing

Applied Physics Letters

Volumn 102, Issue 19, 2013, Pages

  Su, Bo Yuan ^a   Chu, Sheng Yuan ^a   Juang, Yung Der ^b   Chen, Han Chang ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL UNIVERSITY OF TAINAN   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

FIELD-EFFECT MOBILITIES; ON/OFF-CURRENT RATIOS; OPTIMAL TEMPERATURE; OXYGEN-RELATED DEFECTS; SOLUTION-PROCESSED; SUBTHRESHOLD SLOPE; THIN-FILM TRANSISTOR (TFTS); UV-OZONE TREATMENT;

ANNEALING; PHOTOELECTRONS; SLOPE STABILITY; TEMPERATURE; THIN FILM TRANSISTORS; X RAY PHOTOELECTRON SPECTROSCOPY;

OZONE;

EID: 84877950529     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4804993     Document Type: Article

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