Electrical and reliability characteristics of high-κ HoTiO3 α-InGaZnO thin-film transistors

IEEE Electron Device Letters

Volumn 35, Issue 1, 2014, Pages 66-68

  Pan, Tung Ming ^a   Chen, Ching Hung ^a   Liu, Jiang Hung ^a   Her, Jim Long ^a   Koyama, Keiichi ^b  

^a CHANG GUNG UNIVERSITY   (Taiwan)

^b KAGOSHIMA UNIVERSITY   (Japan)

Author keywords

Amorphous indium; gallium; HoTiO3; thin film transistor (TFT); zinc oxide ( IGZO)

Indexed keywords

C. THIN FILM TRANSISTOR (TFT); ELECTRICAL AND RELIABILITY CHARACTERISTICS; ELECTRICAL CHARACTERISTIC; FIELD-EFFECT MOBILITIES; HOTIO3; INDIUM-GALLIUM-ZINC OXIDES; LOW THRESHOLD VOLTAGE; THIN-FILM TRANSISTOR (TFTS);

DIELECTRIC MATERIALS; GALLIUM; INDIUM; SEMICONDUCTING ORGANIC COMPOUNDS; SURFACE ROUGHNESS; THRESHOLD VOLTAGE; ZINC OXIDE;

THIN FILM TRANSISTORS;

EID: 84891510325     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2013.2287349     Document Type: Article

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