Low temperature high-mobility InZnO thin-film transistors fabricated by excimer laser annealing

Applied Physics Letters

Volumn 102, Issue 12, 2013, Pages

  Fujii, Mami ^a,b   Ishikawa, Yasuaki ^a,c   Ishihara, Ryoichi ^d   Van Der Cingel, Johan ^d   Mofrad, Mohammad R T ^d   Horita, Masahiro ^a,c   Uraoka, Yukiharu ^a,c  

^a NARA INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^b JAPAN SOCIETY FOR THE PROMOTION OF SCIENCE   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^d DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

C. THIN FILM TRANSISTOR (TFT); EXCIMER LASER ANNEALING; FIELD-EFFECT MOBILITIES; HIGH MOBILITY; HIGH-ENERGY IRRADIATION; LOW TEMPERATURES; SUBSTRATE TEMPERATURE; THERMAL CALCULATION;

EXCIMER LASERS; THIN FILM TRANSISTORS;

SEMICONDUCTING ORGANIC COMPOUNDS;

EID: 84875919849     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4798519     Document Type: Article

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