Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence

Applied Physics Letters

Volumn 105, Issue 15, 2014, Pages

  Ghetmiri, Seyed Amir ^a   Du, Wei ^a   Margetis, Joe ^b   Mosleh, Aboozar ^a   Cousar, Larry ^a   Conley, Benjamin R ^a   Domulevicz, Lucas ^c   Nazzal, Amjad ^c   Sun, Greg ^d   Soref, Richard A ^d   Tolle, John ^b   Li, Baohua ^e   Naseem, Hameed A ^a   Yu, Shui Qing ^a  

^a University of Arkansas   (United States)

^b ASM   (United States)

^c WILKES UNIVERSITY   (United States)

^d UNIVERSITY OF MASSACHUSETTS BOSTON   (United States)

^e Arktonics LLC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84908032498     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4898597     Document Type: Article

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