Germanium tin: Silicon photonics toward the mid-infrared [invited]

Photonics Research

Volumn 1, Issue 2, 2013, Pages 69-76

  Kasper, E ^a   Kittler, M ^b   Oehme, M ^a   Arguirov, T ^b  

^a UNIVERSITY OF STUTTGART   (Germany)

^b BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

Laser materials; Light emitting diodes; Photodetectors

Indexed keywords

EPITAXIAL GROWTH; GERMANIUM; GERMANIUM COMPOUNDS; INFRARED DEVICES; INFRARED RADIATION; MOLECULAR BEAM EPITAXY; PHOTODETECTORS; PHOTONICS; PHOTONS; SEMICONDUCTOR DIODES; TEMPERATURE; TIN; TIN COMPOUNDS;

BAND-TO-BAND TRANSITION; DETECTION WAVELENGTHS; GROUP-IV SEMICONDUCTORS; IN-SITU REFLECTOMETRY; INDIRECT SEMICONDUCTOR; LASER MATERIALS; OPTICAL CHARACTERIZATION TECHNIQUE; VIRTUAL SUBSTRATES;

LIGHT EMITTING DIODES;

EID: 84886372185     PISSN: 23279125     EISSN: None     Source Type: Journal    
DOI: 10.1364/PRJ.1.000069     Document Type: Article

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