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Applied Physics Letters

Volumn 97, Issue 22, 2010, Pages

Direct-gap photoluminescence with tunable emission wavelength in Ge 1-y Sny alloys on silicon

(7) Mathews, J a Beeler, R T a Tolle, J a Xu, C a Roucka, R a Kouvetakis, J a Menndez J a

a ARIZONA STATE UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EMISSION PEAKS; EMISSION WAVELENGTH; GAP TRANSITION; LASER DEVICE; LOWER ENERGIES; ROOM TEMPERATURE; SI SUBSTRATES; SN CONCENTRATION; TUNABLE EMISSIONS;

CERIUM ALLOYS; GERMANIUM; PHOTOLUMINESCENCE; SILICON ALLOYS; TIN;

TIN ALLOYS;

EID: 78650672431 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3521391 Document Type: Article

Times cited : (179)

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