Compositional dependence of the direct and indirect band gaps in Ge1-ySny alloys from room temperature photoluminescence: Implications for the indirect to direct gap crossover in intrinsic and n-type materials

Semiconductor Science and Technology

Volumn 29, Issue 11, 2014, Pages

  Jiang, L ^a   Gallagher, J D ^a   Senaratne, C L ^a   Aoki, T ^a   Mathews, J ^b   Kouvetakis, J ^a   Menendez J ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

^b UNIVERSITY OF DAYTON   (United States)

Author keywords

Alloys; GeSn; Photoluminescence

Indexed keywords

ALLOYING; ENERGY GAP; GERMANIUM; PHOTOLUMINESCENCE; TIN;

COMPOSITIONAL DEPENDENCE; COMPOSITIONAL RANGE; CURRENT THEORETICAL MODELS; DIRECT-GAP SEMICONDUCTOR; GESN; MICROSCOPIC MODELING; ROOM-TEMPERATURE PHOTOLUMINESCENCE; VIRTUAL CRYSTAL APPROXIMATION;

TIN ALLOYS;

EID: 84907928469     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/29/11/115028     Document Type: Article

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