SCOPUS 정보 검색 플랫폼

Thin Solid Films

Volumn 520, Issue 11, 2012, Pages 3927-3930

Low-temperature growth of Ge 1 - XSn x thin films with strain control by molecular beam epitaxy

(5) Lin, Hai a Chen, Robert a Huo, Yijie a Kamins, Theodore I a Harris, James S a

a Stanford University (United States)

Author keywords

Epitaxial growth; GeSn alloy; Molecular beam epitaxy; Strain; Structural characterization

Indexed keywords

HIGH QUALITY; LOW TEMPERATURE GROWTH; ROUGHENED SURFACES; SN CONCENTRATION; STRAINED-GE; STRUCTURAL CHARACTERIZATION;

EPITAXIAL GROWTH; GERMANIUM; MOLECULAR BEAM EPITAXY; SECONDARY ION MASS SPECTROMETRY; STRAIN; TEMPERATURE; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

TIN;

EID: 84862777195 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2012.01.047 Document Type: Article

Times cited : (25)

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