Ternary GeSiSn alloys: New opportunities for strain and band gap engineering using group-IV semiconductors

Thin Solid Films

Volumn 518, Issue 9, 2010, Pages 2531-2537

  D'Costa, V R ^a   Fang, Y Y ^a   Tolle, J ^a   Kouvetakis, J ^a   Menendez J ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

Author keywords

Group IV semiconductors; Semiconductor alloys

Indexed keywords

BAND GAP ENGINEERING; BASIC PROPERTIES; GROUP-IV SEMICONDUCTORS; HETEROSTRUCTURES; NEW OPPORTUNITIES; NEW RESULTS; PHOTOVOLTAICS; SEMI-CONDUCTOR ALLOYS; SI SUBSTRATES;

ELECTRONIC STRUCTURE; GERMANIUM; OPTICAL PROPERTIES;

ALLOYS;

EID: 76049092001     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.09.149     Document Type: Article

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