Lattice constant and substitutional composition of GeSn alloys grown by molecular beam epitaxy

Applied Physics Letters

Volumn 103, Issue 4, 2013, Pages

  Bhargava, Nupur ^a   Coppinger, Matthew ^a   Prakash Gupta, Jay ^a   Wielunski, Leszek ^b   Kolodzey, James ^a  

^a UNIVERSITY OF DELAWARE   (United States)

^b RUTGERS UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FRACTIONS; GESN ALLOYS; HIGH QUALITY; HIGH RESOLUTION X RAY DIFFRACTION; LATTICE SITES; RUTHERFORD BACK-SCATTERING SPECTROMETRY; SOLID SOURCE MOLECULAR BEAM EPITAXY; STRAINED LAYERS;

ALLOYS; EPITAXIAL GROWTH; GERMANIUM; LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; TIN; X RAY DIFFRACTION;

TIN ALLOYS;

EID: 84885055233     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4816660     Document Type: Article

References (27)

1. G. He and H. A. Atwater, Phys. Rev. Lett. 79, 1937 (1997). 10.1103/PhysRevLett.79.1937
2. J. Kouvetakis, J. Menéndez, and A. V. G. Chizmeshya, Annu. Rev. Mater. Res. 36, 497 (2006). 10.1146/annurev.matsci.36.090804.095159
3. R. Soref, J. Kouvetakis, J. Tolle, J. Menéndez, and V. D'Costa, J. Mater. Res. 22, 3281 (2007). 10.1557/JMR.2007.0415
4. M. Nakamura, Y. Shimura, S. Takeuchi, O. Nakatsuka, and S. Zaima, Thin Solid Films 520, 3201 (2012). 10.1016/j.tsf.2011.10.153
5. B. Vincent, Y. Shimura, S. Takeuchi, T. Nishimura, G. Eneman, A. Firrincieli, J. Demeulemeester, A. Vantomme, T. Clarysse, O. Nakatsuka, S. Zaima, J. Dekoster, M. Caymax, and R. Loo, Microelectron. Eng. 88, 342 (2011). 10.1016/j.mee.2010.10.025
6. M. Coppinger, J. Hart, N. Bhargava, S. Kim, and J. Kolodzey, Appl. Phys. Lett. 102, 141101 (2013). 10.1063/1.4800448
7. V. R. D'Costa, C. S. Cook, A. G. Birdwell, C. L. Littler, M. Canonico, S. Zollner, J. Kouvetakis, and J. Menéndez, Phys. Rev. B 73, 125207 (2006). 10.1103/PhysRevB.73.125207
8. G. Sun, R. A. Soref, and H. H. Cheng, J. Appl. Phys. 108, 033107 (2010). 10.1063/1.3467766
9. C. D. Thurmond, F. A. Trumbore, and M. Kowalchik, J. Chem. Phys. 25, 799 (1956). 10.1063/1.1743083
10. M. Oehme, J. Werner, M. Gollhofer, M. Schmid, M. Kaschel, E. Kasper, and J. Schulze, IEEE Photon. Technol. Lett. 23, 1751 (2011). 10.1109/LPT.2011. 2169052
11. X. Deng, B.-K. Yang, S. A. Hackney, M. Krishnamurthy, and D. R. M. Williams, Phys. Rev. Lett. 80, 1022 (1998). 10.1103/PhysRevLett.80.1022
12. O. Gurdal, P. Desjardins, J. R. A. Carlsson, N. Taylor, H. H. Radamson, J.-E. Sundgren, and J. E. Greene, J. Appl. Phys. 83, 162 (1998). 10.1063/1.366690
13. A. V. G. Chizmeshya, M. R. Bauer, and J. Kouvetakis, Chem. Mater. 15, 2511 (2003). 10.1021/cm0300011
14. R. Beeler, R. Roucka, A. V. G. Chizmeshya, J. Kouvetakis, and J. Menéndez, Phys. Rev. B 84, 035204 (2011). 10.1103/PhysRevB.84.035204
15. M. W. Dashiell, J. Kolodzey, P. Boucaud, V. Yam, and J.-M. Lourtioz, J. Vac. Sci. Technol. B 18, 1728 (2000). 10.1116/1.591462
16. K. Prabhakarana, T. Ogino, R. Hull, J. C. Bean, and L. J. Peticolas, Surf. Sci. 316, L1031 (1994). 10.1016/0039-6028(94)91117-7
17. M. Mayer, SIMNRA version 6.06, February 2011.
18. L. C. Feldman, J. W. Mayer, and S. T. Picraux, Materials Analysis by Ion Channeling (Academic Press, 1982).
19. B. M. Paine, V. S. Speriosu, L. S. Wielunski, H. L. Glass, and M. A. Nicolet, Nucl. Instrum. Methods Phys. Res. 191, 80 (1981). 10.1016/0029-554X(81) 90987-3
20. P. F. Fewster, Springer Handbook of Crystal Growth: Crystalline Layer Structures with X-Ray Diffractometry (Springer, Berlin/Heidelberg, 2010), p. 1409.
21. N. Faleev, N. Sustersic, N. Bhargava, J. Kolodzey, A. Yu Kazimirov, and C. Honsberg, J. Cryst. Growth 365, 44 (2013). 10.1016/j.jcrysgro.2012.12.002
22. W.-X. Ni, K. Lyutovich, J. Alami, C. Tengstedt, M. Bauer, and E. Kasper, J. Cryst. Growth 227-228, 756 (2001). 10.1016/S0022-0248(01)00821-1
23. M. Burriel, J. Santiso, M. D. Rossell, G. V. Tendeloo, A. Figueras, and G. Garcia, J. Phys. Chem. C 112, 10982 (2008). 10.1021/jp7101622
24. T. Konya, Rigaku J. 25, 1 (2009).
25. C. Claeys and E. Simoen, Germanium-Based Technologies: From Materials to Devices (Elsevier, 2011), p. 54.
26. S. G. Shen, J. Phys.: Condens. Matter 6, 8733 (1994). 10.1088/0953-8984/6/42/006
27. P. Moontragoon, R. A. Soref, and Z. Ikonic, J. Appl. Phys. 112, 073106 (2012). 10.1063/1.4757414