Achieving direct band gap in germanium through integration of Sn alloying and external strain

Journal of Applied Physics

Volumn 113, Issue 7, 2013, Pages

  Gupta, Suyog ^a   Magyari Köpe, Blanka ^a   Nishi, Yoshio ^a   Saraswat, Krishna C ^a  

^a Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIAXIAL STRAIN EFFECT; DIRECT BAND GAP; ELECTRONIC BAND STRUCTURE; EMPIRICAL PSEUDOPOTENTIAL METHOD; EXTERNAL STRAINS; GERMANIUM TINS; GESN ALLOYS; HIGH-SPEED ELECTRONIC DEVICES; NONLOCAL; POTENTIAL FLUCTUATIONS; THEORETICAL MODELS;

CERIUM ALLOYS; ENERGY GAP; GERMANIUM; TIN;

GERMANIUM ALLOYS;

EID: 84874603378     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4792649     Document Type: Article

References (30)

1. M. V. Fischetti and S. E. Laux, J. Appl. Phys. 80 (4), 2234 (1996). 10.1063/1.363052
2. M. El Kurdi, G. Fishman, S. Sauvage, and P. Boucaud, J. Appl. Phys. 107, 013710 (2010). 10.1063/1.3279307
3. D. Nam, D. Sukhdeo, A. Roy, K. Balram, S.-L. Cheng, K. C.-Y. Huang, Z. Yuan, M. Brongersma, Y. Nishi, D. Miller, and K. Saraswat, Opt. Express 19 (27), 25866 (2011). 10.1364/OE.19.025866
4. G. Capellini, G. Kozlowski, Y. Yamamoto, M. Lisker, C. Wenger, G. Niu, P. Zaumseil, B. Tillack, A. Ghrib, M. de Kersauson, M. El Kurdi, P. Boucaud, and T. Schroeder, J. Appl. Phys 113, 013513 (2013). 10.1063/1.4772781
5. J. R. Jain, A. Hryciw, T. M. Baer, D. A. Miller, M. L. Brongersma, and R. T. Howe, Nature Photon. 6 (6), 398 (2012). 10.1038/nphoton.2012.111
6. Y. Huo, H. Lin, Y. Rong, M. Makarova, M. Li, R. Chen, T. I. Kamins, J. Vuckovic, and J. S. Harris, in Proceedings of the IEEE International Conference on Group IV Photonics (San Francisco, CA, USA, 2009), pp. 265-267.
7. G. He and H. A. Atwater, Phys. Rev. Lett. 79, 1937 (1997). 10.1103/PhysRevLett.79.1937
8. J. D. Sau and M. L. Cohen, Phys. Rev. B 75, 045208 (2007). 10.1103/PhysRevB.75.045208
9. S. Gupta, R. Chen, B. Magyari-Köpe, H. Lin, B. Yang, A. Nainani, J. S. Harris, and K. C. Saraswat, in Proceedings of the IEEE International Electron Devices Meeting (Institute of Electrical and Electronics Engineering Proceedings, 2011), p. 398.
10. S. Gupta, B. Vincent, D. Lin, M. Gunji, A. Firrincieli, F. Gencarelli, B. Magyari-Köpe, B. Yang, B. Douhard, J. Delmotte, A. Franquet, M. Caymax, J. Dekoster, Y. Nishi, and K. C. Saraswat, in Proceedings of the IEEE VLSI Technology Symposium (Institute of Electrical and Electronics Engineering Proceedings, 2012), p. 95.
11. G. Han, S. Su, C. Zhan, Y. Yang, L. Wang, P. Guo, W. Wei, C. P. Wong, Z. X. Shen, B. Cheng, and Y.-C. Yeo, in Proceedings of the IEEE International Electron Devices Meeting (Institute of Electrical and Electronics Engineering Proceedings, 2011), p. 402.
12. D. W. Jenkins and J. D. Dow, Phys. Rev. B 36 (15), 7994 (1987). 10.1103/PhysRevB.36.7994
13. P. Moontragoon, Z. Ikonić, and P. Harrison, Semicond. Sci. Technol. 22, 742 (2007). 10.1088/0268-1242/22/7/012
14. W.-J. Yin, X.-G. Gong, and S.-H. Wei, Phys. Rev. B 78, 161203 (2008). 10.1103/PhysRevB.78.161203
15. R. Chen, H. Lin, Y. Huo, C. Hitzman, T. I. Kamins, and J. S. Harris, Appl. Phys. Lett. 99, 181125 (2011). 10.1063/1.3658632
16. G. Grzybowski, R. T. Beeler, L. Jiang, D. J. Smith, J. Kouvetakis, and J. Menendez, Appl. Phys. Lett. 101, 072105 (2012). 10.1063/1.4745770
17. J. R. Chelikowsky and M. L. Cohen, Phys. Rev. B 14 (2), 556, (1976). 10.1103/PhysRevB.14.556
18. M. M. Rieger and P. Vogl, Phys. Rev. B 48, 14276 (1993). 10.1103/PhysRevB.48.14276
19. P. Friedel, M. S. Hybertsen, and M. Schlüter, Phys. Rev. B 39, 7974 (1989). 10.1103/PhysRevB.39.7974
20. P. Aella, C. Cook, J. Tolle, S. Zollner, A. V. G. Chizmeshya, and J. Kouvetakis, Appl. Phys. Lett. 84, 888 (2004). 10.1063/1.1645324
21. A. Zunger and J. E. Jaffe, Phys. Rev. Lett. 51 (8), 662 (1983). 10.1103/PhysRevLett.51.662
22. M. Jaros, Rep. Prog. Phys. 48, 1091-1154 (1985). 10.1088/0034-4885/48/8/ 001
23. G. Bohm and K. Unger, Phys. Status Solidi B 216, 961 (1999). 10.1002/(SICI)1521-3951(199912)216:2<961::AID-PSSB961>3.0.CO;2-6
24. A.-B. Chen and A. Sher, Semiconductor Alloys: Physics and Materials Engineering (Plenum, New York, 1995).
25. S. J. Lee, T. S. Kwon, K. Nahm, and C. K. Kim, J. Phys. Condens. Matter 2, 3253 (1990). 10.1088/0953-8984/2/14/010
26. J. P. Fleurial and A. Borshchevsky, J. Eletrochem. Soc. 137 (9), 2928-2937 (1990). 10.1149/1.2087101
27. B. Vincent, F. Gencarelli, H. Bender, C. Merckling, B. Douhard, D. H. Petersen, O. Hansen, H. H. Henrichsen, J. Meersschaut, W. Vandervorst, M. Heyns, R. Loo, and M. Caymax, Appl. Phys. Lett. 99, 152103 (2011). 10.1063/1.3645620
28. H. Lin, R. Chen, Y. Huo, T. I. Kamins, and J. S. Harris, Thin Solid Films 520 (11), 3927 (2012). 10.1016/j.tsf.2012.01.047
29. R. Chen, Y.-C. Huang, S. Gupta, A. C. Lin, E. Sanchez, Y. Kim, K. C. Saraswat, T. I. Kamins, and J. S. Harris, J. Cryst. Growth 365, 29 (2013). 10.1016/j.jcrysgro.2012.12.014
30. Physics of Group IV Elements and III-V Compounds, edited by, O. Madelung, M. Schultz, and, H. Weiss, (Springer-Verlag, New York, 1982), Vol. 17a.