Room-temperature electroluminescence from Ge/Ge1-xSn x/Ge diodes on Si substrates

Applied Physics Letters

Volumn 104, Issue 24, 2014, Pages

  Du, Wei ^a   Zhou, Yiyin ^a   Ghetmiri, Seyed A ^a   Mosleh, Aboozar ^a   Conley, Benjamin R ^a   Nazzal, Amjad ^b   Soref, Richard A ^c   Sun, Greg ^c   Tolle, John ^d   Margetis, Joe ^d   Naseem, Hameed A ^a   Yu, Shui Qing ^a  

^a University of Arkansas   (United States)

^b WILKES UNIVERSITY   (United States)

^c UNIVERSITY OF MASSACHUSETTS BOSTON   (United States)

^d ASM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTROLUMINESCENCE; EMISSION SPECTROSCOPY; LIGHT EMITTING DIODES; SEMICONDUCTOR ALLOYS; SILICON; TIN;

BANDGAP TRANSITION; DOUBLE HETEROSTRUCTURES; ELECTROLUMINESCENCE EMISSION; EMISSION PEAKS; INJECTION CONDITIONS; INJECTION LEVELS; INTEGRATED EMISSIONS; SI SUBSTRATES;

TIN ALLOYS;

EID: 84903151299     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4884380     Document Type: Article

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