Room-temperature electroluminescence from GeSn light-emitting pin diodes on Si

IEEE Photonics Technology Letters

Volumn 23, Issue 23, 2011, Pages 1751-1753

  Oehme, M ^a   Werner, J ^a   Gollhofer, M ^a   Schmid, M ^a   Kaschel, M ^a   Kasper, E ^a   Schulze, J ^a  

^a UNIVERSITY OF STUTTGART   (Germany)

Author keywords

Electroluminescence; germanium; GeSn; light emitting diode (LED); Si photonics

Indexed keywords

ELECTROLUMINESCENCE EMISSION; GESN; INFRARED REGIONS; LAYER STRUCTURES; LOW TEMPERATURES; PIN DIODE; ROOM TEMPERATURE; SI PHOTONICS;

DIODES; ELECTROLUMINESCENCE; ENERGY GAP; GERMANIUM; LIGHT; LIGHT EMISSION; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DIODES; SILICON; TIN;

LIGHT EMITTING DIODES;

EID: 80855132156     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2011.2169052     Document Type: Article

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