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Volumn 105, Issue 5, 2014, Pages

Competition of optical transitions between direct and indirect bandgaps in Ge1-xSnx

(11) Du, Wei a Ghetmiri, Seyed A a Conley, Benjamin R a Mosleh, Aboozar a Nazzal, Amjad b Soref, Richard A c Sun, Greg c Tolle, John d Margetis, Joe d Naseem, Hameed A a Yu, Shui Qing a

a University of Arkansas (United States)

b WILKES UNIVERSITY (United States)

c UNIVERSITY OF MASSACHUSETTS BOSTON (United States)

d ASM (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; GERMANIUM; SILICON;

BANDGAP MATERIALS; BANDGAP TRANSITION; DIRECT TRANSITION; HIGH TEMPERATURE; INDIRECT TRANSITION; PROGRESSIVE ENHANCEMENT; RELATIVE PEAK INTENSITY; TEMPERATURE-DEPENDENT PHOTOLUMINESCENCE;

TIN;

EID: 84905457545 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4892302 Document Type: Article

Times cited : (73)

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