Structural properties of boron-doped germanium-Tin alloys grown by molecular beam epitaxy

Journal of Electronic Materials

Volumn 43, Issue 4, 2014, Pages 931-937

  Bhargava, Nupur ^a   Gupta, Jay Prakash ^a   Adam, Thomas ^b   Kolodzey, James ^a  

^a UNIVERSITY OF DELAWARE   (United States)

^b STATE UNIVERSITY OF NEW YORK   (United States)

Author keywords

boron doping; Germanium tin alloys; MBE

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; CRYSTAL IMPURITIES; GERMANIUM ALLOYS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR QUANTUM WELLS; STRUCTURAL PROPERTIES; TIN METALLOGRAPHY; X RAY DIFFRACTION ANALYSIS;

BORON-DOPING; GERMANIUM TINS; HIGH RESOLUTION X RAY DIFFRACTION; RECTIFYING CHARACTERISTICS; RUTHERFORD BACK-SCATTERING SPECTROMETRY; SECONDARY ION MASS SPECTROSCOPY; SOLID SOURCE MOLECULAR BEAM EPITAXY; SUBSTITUTIONAL LATTICE SITES;

TIN ALLOYS;

EID: 84898785182     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-014-3088-3     Document Type: Article

References (14)

1. V.R. D'Costa, C.S. Cook, A.G. Birdwell, C.L. Littler, M. Canonico, S. Zollner, J. Kouvetakis, and J. Menendez, Phys. Rev. 73, 16 (2006).
2. G. Roelkens, J. Van Campenhout, J. Brouckaert, D. Van Thourhout, R. Baets, P. R. Romeo, P. Regreny, A. Kazmierczak, C. Seassal, X. Letartre, G. Hollinger, J. M. Fedeli, L. Di Cioccio, and C. Lagahe-Blanchard, Mater. Today 10, 36-43 (2007).
3. M. Coppinger, J. Hart, N. Bhargava, S. Kim, and J. Kolodzey, Appl. Phys. Lett. 102, 3 (2013).
4. N. Bhargava, M. Coppinger, J.P. Gupta, L. Wielunski, and J. Kolodzey, Appl. Phys. Lett. 103, 4 (2013).
5. P. Moontragoon, Z. Ikonic, and P. Harrison, Semicond. Sci. Tech. 22, 742-748 (2007).
6. J.P. Gupta, N. Bhargava, S. Kim, T. Adam, and J. Kolodzey, Appl. Phys. Lett. 102, 251117 (2013).
7. J.D. Sau and M.L. Cohen, Phys. Rev. 75, 7 (2007).
8. O. Nakatsuka, N. Tsutsui, Y. Shimura, S. Takeuchi, A. Sakai, and S. Zaima, Jpn. J. Appl. Phys. 49, 4 (2010).
9. M.W. Dashiell, J. Kolodzey, P. Boucaud, V. Yam, and J.M. Lourtioz, J. Vac. Sci. Technol. 18, 1728-1731 (2000).
10. K. Prabhakarana, T. Ogino, R. Hull, J.C. Bean, and L.J. Peticolas, Surf. Sci. 316, L1031-L1033 (1994).
11. P.F. Fewster, Springer Handbook of Crystal Growth: Crystalline Layer Structures with X-ray Diffractometry (Berlin: Springer, 2010).
12. N. Faleev, N. Sustersic, N. Bhargava, J. Kolodzey, A.Y. Kazimirov, and C. Honsberg, J. Cryst. Growth 365, 44-53 (2013).
13. M. Burriel, J. Santiso, M.D. Rossell, G. Van Tendeloo, A. Figueras, and G. Garcia, J. Phys. Chem. 112, 10982-10987 (2008).
14. S. Kim, J. Gupta, N. Bhargava, M. Coppinger, and J. Kolodzey, IEEE Electron Device Lett. 34, 1217-1219 (2013).