Single CuOx nanowire memristor: Forming-free resistive switching behavior

ACS Applied Materials and Interfaces

Volumn 6, Issue 19, 2014, Pages 16537-16544

  Liang, Kai De ^a   Huang, Chi Hsin ^a   Lai, Chih Chung ^a   Huang, Jian Shiou ^a   Tsai, Hung Wei ^a   Wang, Yi Chung ^a   Shih, Yu Chuan ^a   Chang, Mu Tung ^b   Lo, Shen Chuan ^b   Chueh, Yu Lun ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

AAO membrane; CuOx nanowire; forming free; memristor; ReRAM; resistive switching

Indexed keywords

CHEMICAL ANALYSIS; COPPER OXIDES; ELECTRIC FIELDS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; MEMRISTORS; NANOWIRES; RRAM; SWITCHING SYSTEMS; TRANSMISSION ELECTRON MICROSCOPY;

AAO MEMBRANE; ELECTRIC FIELD SWITCHING; ELECTROCHEMICAL PROCESS; MEMRISTOR; RESISTIVE SWITCHING; RESISTIVE SWITCHING BEHAVIORS; SWITCHING CHARACTERISTICS; SWITCHING MECHANISM;

SWITCHING;

EID: 84907899912     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am502741m     Document Type: Article

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