ZnO 1- x nanorod arrays/ZnO thin film bilayer structure: From homojunction diode and high-performance memristor to complementary 1D1R application

ACS Nano

Volumn 6, Issue 9, 2012, Pages 8407-8414

  Huang, Chi Hsin ^a   Huang, Jian Shiou ^a   Lin, Shih Ming ^a   Chang, Wen Yuan ^b   He, Jr Hau ^b   Chueh, Yu Lun ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

complementary 1D1R; homojunction diode; nonvolatile memory; resistive switching; ZnO 1 x nanorod arrays

Indexed keywords

COMPLEMENTARY 1D1R; HOMOJUNCTION DIODES; NANOROD ARRAYS; NON-VOLATILE MEMORIES; RESISTIVE SWITCHING;

CONTACT ANGLE; DIODES; NANORODS; SCHOTTKY BARRIER DIODES; SWITCHING SYSTEMS; TEMPERATURE;

ZINC OXIDE;

NANOMATERIAL; ZINC OXIDE;

ARTICLE; ARTIFICIAL MEMBRANE; CHEMISTRY; CRYSTALLIZATION; DATA STORAGE DEVICE; ELECTRODE; ELECTRONICS; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; IMPEDANCE; INSTRUMENTATION; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; SEMICONDUCTOR; ULTRASTRUCTURE;

COMPUTER STORAGE DEVICES; CRYSTALLIZATION; ELECTRIC IMPEDANCE; ELECTRODES; ELECTRONICS; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; MEMBRANES, ARTIFICIAL; NANOSTRUCTURES; NANOTECHNOLOGY; PARTICLE SIZE; SEMICONDUCTORS; ZINC OXIDE;

EID: 84866639057     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn303233r     Document Type: Article

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