High electron mobility thin-film transistors based on Ga2O3grown by atmospheric ultrasonic spray pyrolysis at low temperatures

Applied Physics Letters

Volumn 105, Issue 9, 2014, Pages

  Thomas, Stuart R ^a   Adamopoulos, George ^b   Lin, Yen Hung ^a   Faber, Hendrik ^a   Sygellou, Labrini ^c   Stratakis, Emmanuel ^d,e   Pliatsikas, Nikos ^f   Patsalas, Panos A ^f   Anthopoulos, Thomas D ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b LANCASTER UNIVERSITY   (United Kingdom)

^c INSTITUTE OF CHEMICAL ENGINEERING SCIENCES   (Greece)

^d INSTITUTE OF ELECTRONIC STRUCTURE AND LASER   (Greece)

^e UNIVERSITY OF CRETE   (Greece)

^f ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH ELECTRON MOBILITY; LOW TEMPERATURES; THIN-FILM TRANSISTOR (TFTS); ULTRASONIC SPRAY PYROLYSIS;

EID: 84907012628     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4894643     Document Type: Article

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