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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 2 A, 2001, Pages 530-537

Influence of the amorphous silicon thickness on top gate thin-film transistor electrical performances

(6) Martin, Sandrine a Chiang, Chun Sung a Nahm, Jeong Yeop a Li, Tong a Kanicki, Jerzy a Ugai, Yasuhiro b

a UNIVERSITY OF MICHIGAN (United States)

b Hosiden and Philips Display Corp (Japan)

Author keywords

Amorphous silicon; Field effect activation energy; Field effect mobility; Series resistances; Thin film transistor; Top gate

Indexed keywords

ACTIVATION ENERGY; AMORPHOUS SILICON; COMPOSITION EFFECTS; DEPOSITION; ELECTRIC RESISTANCE; ELECTRON MOBILITY; GATES (TRANSISTOR); MICROSTRUCTURE; THICKNESS CONTROL; THRESHOLD VOLTAGE;

CHANNEL LENGTH; ELECTRICAL PERFORMANCES; FIELD-EFFECT ACTIVATION ENERGY; FIELD-EFFECT MOBILITY; TOP GATE THIN-FILM TRANSISTORS;

THIN FILM TRANSISTORS;

EID: 0035246294 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.40.530 Document Type: Article

Times cited : (76)

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