The role of source and drain material in the performance of GIZO based thin-film transistors

Physica Status Solidi (A) Applications and Materials Science

Volumn 205, Issue 8, 2008, Pages 1905-1909

  Barquinha, P ^a   Vila, A ^b   Goncalves G ^a   Pereira, L ^a   Martins, R ^a   Morante, J ^b   Fortunate, E ^a  

^a UNIVERSIDADE NOVA DE LISBOA   (Portugal)

^b UNIVERSITY OF BARCELONA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

CONTACT RESISTANCE VALUES; ELECTRODE MATERIALS; FIELD EFFECTS; INDIUM-TIN-OXIDE; INTRINSIC PARAMETERS; ON/OFF RATIOS; OXIDE SEMICONDUCTORS; SERIES RESISTANCES; SOURCE AND DRAINS; TRANSPARENT ELECTRONICS;

CONTACT RESISTANCE; CRYSTALS; ELECTRIC CONDUCTIVITY; ELECTROCHEMICAL ELECTRODES; ELECTROLYSIS; IRON COMPOUNDS; MOLYBDENUM; OXIDES; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR MATERIALS; THIN FILM DEVICES; THIN FILM TRANSISTORS; TIN; TITANIUM COMPOUNDS; TRANSISTORS; ZINC; ZINC OXIDE;

INDIUM;

EID: 54249108508     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200778940     Document Type: Conference Paper

References (20)

1. J. F. Wager, Science 300, 1245 (2003).
2. M. W. J. Prins, K. O. Grosseholz, G. Muller, J. F. M. Cillessen, J. B. Giesbers, R. P. Weening, and R. M. Wolf, Appl. Phys. Lett. 68, 3650 (1996).
3. R. L. Hoffman, B. J. Norris, and J. F. Wager, Appl. Phys. Lett. 82, 733 (2003).
4. E. M. C. Fortunato, P. M. C. Barquinha, A. Pimentel, A. M. F. Goncalves, A. J. S. Marques, L. M. N. Pereira, and R. F. P. Martins, Adv. Mater, 17, 590 (2005).
5. K. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono, Science 300, 1269 (2003).
6. H. Q. Chiang, J. F. Wager, R. L. Hoffman, J. Jeong, and D. A. Keszler, Appl. Phys. Lett. 86, 3 (2005).
7. N. L. Dehuff, E. S. Kettenring, D. Hong, H. Q. Chiang, J. F. Wager, R. L. Hoffman, C. H. Park, and D. A. Keszler, J. Appl. Phys, 97, 5 (2005).
8. P. Barquinha, A. Pimentel, A. Marques, L. Pereira, R. Martins, and E. Fortunato, J. Non-Cryst. Solids 352, 1749 (2006).
9. R. Martins, P. Barquinha, I. Ferreira, L. Pereira, G. Goncalves, and E. Fortunato, J. Appl. Phys. 101, 044505 (2007).
10. H. Yabuta, M. Sano, K. Abe, T. Aiba, T. Den, H. Kumomi, K. Nomura, T. Kamiya, and H. Hosono, Appl. Phys. Lett. 89, 3 (2006).
11. K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, Nature 432, 488 (2004).
12. J. Kanicki, F. R. Libsch, J. Griffith, and R. Polastre, J. Appl. Phys. 69, 2339 (1991).
13. S. W. Luan and G. W. Neudeck, J. Appl. Phys. 72, 766 (1992).
14. H. Klauk, G. Schmid, W. Radlik, W. Weber, L. S. Zhou, C. D. Sheraw, J. A. Nichols, and T. N. Jackson, Solid State Electron. 47, 297 (2003).
15. K. Seshadri and C. D. Frisbie, Appl. Phys. Lett. 78, 993 (2001).
16. P. V. Necliudov, M. S. Shur, D. J. Gundlach, and T. N. Jackson, Solid State Electron. 47, 259 (2003).
17. D. Natali, L. Fumagalli, and M. Sampietro, J. Appl. Phys. 101, 12 (2007).
18. W. B. Jackson, R. L. Hoffman, and G. S. Herman, Appl. Phys. Lett. 87, 3 (2005).
19. M. Kim, J. H. Jeong, H. J. Lee, T. K. Ahn, H. S. Shin, J. S. Park, J. K. Jeong, Y. G. Mo, and H. D. Kim, Appl. Phys. Lett. 90 (2007).
20. S. Martin, C. S. Chiang, J. Y. Nahm, T. Li, J. Kanicki, and Y. Ugai, Jpn. J. Appl. Phys. Part 1 40, 530 (2001).