SCOPUS 정보 검색 플랫폼

Journal of Applied Physics

Volumn 106, Issue 6, 2009, Pages

High near-infrared transparency and carrier mobility of Mo doped In2 O 3 thin films for optoelectronics applications

(5) Parthiban, S a Elangovan, E b Ramamurthi, K a Martins, R b Fortunato, E b

a BHARATHIDASAN UNIVERSITY (India)

b Center of Excellence in Microelectronics Optoelectronics and Processes (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

BIXBYITE STRUCTURE; DOPING LEVELS; EXPERIMENTAL TECHNIQUES; FIGURE OF MERIT; GLASS SUBSTRATES; HALL COEFFICIENT; HIGH CARRIER MOBILITY; INDIUM OXIDE; N-TYPE CONDUCTIVITY; NEAR INFRA RED; NIR REGIONS; PREFERRED GROWTH; SURFACE MICROSTRUCTURES; XRD;

CARRIER CONCENTRATION; CRYSTALLITE SIZE; DOPING (ADDITIVES); INDIUM; INFRARED DEVICES; MOLYBDENUM; OXIDE FILMS; SCANNING ELECTRON MICROSCOPY; SPRAY PYROLYSIS; THIN FILMS; TRANSPARENCY; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

CARRIER MOBILITY;

EID: 70349640168 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3224946 Document Type: Article

Times cited : (24)

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