High field-effect mobility zinc oxide thin film transistors produced at room temperature

Journal of Non-Crystalline Solids

Volumn 338-340, Issue 1 SPEC. ISS., 2004, Pages 806-809

  Fortunato, E ^a   Pimentel, A ^a   Pereira, L ^a   Goncalves A ^a   Lavareda, G ^a   Aguas H ^a   Ferreira, I ^a   Carvalho, C N ^a   Martins, R ^a  

^a UNIVERSIDADE NOVA DE LISBOA   (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; DIELECTRIC MATERIALS; DOPING (ADDITIVES); GATES (TRANSISTOR); LIGHT TRANSMISSION; POLYCRYSTALLINE MATERIALS; SCANNING ELECTRON MICROSCOPY; THRESHOLD VOLTAGE; ZINC OXIDE;

FIELD EFFECT MOBILITY; GATE DIELECTRICS; GATE VOLTAGES; ROOM TEMPERATURE;

THIN FILM TRANSISTORS;

EID: 2942622227     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2004.03.096     Document Type: Conference Paper

References (8)

1. Wager J.F. Science. 300:2003;1245.
2. Masuda S., Kitamura K., Okumura Y., Miyatake S., Tabata H., Kawai T. J. Appl. Phys. 93:2003;1624.
3. Hoffman R.L., Norris B.J., Wager J.F. Appl. Phyis. Lett. 82:2003;733.
4. Carcia P.F., McLean R.S., Reilly M.H., Nunes G. Jr. Appl. Phys. Lett. 82:2003;1117.
5. Nishii J., Hossain F.M., Takagi S., Aita T., Saikusa K., Ohmaki Y., Ohkubo I., Ohtomo A., Fukumura T., Matsukura F., Ohno Y., Koinuma H., Ohno H., Kawasaki M. Jpn. J. Appl. Phys. 42:2003;L347.
6. Nomura K., Ohta H., Ueda K., Kamiya T., Hirano M., Hosono H. Science. 300:2003;1269.
7. Assunção V., Fortunato E., Marques A., Águas H., Ferreira I., Costa M.E.V., Martins R. Thin Solid Films. 427:2003;401.
8. Howard W.E. Kagan C.R., Andry P. Thin-Film Transistors. 2003;Marcel Dekker, New York. (Chapter 1).