Photoluminescence studies of band-edge transitions in GaN epitaxial layers grown by plasma-assisted molecular beam epitaxy

Journal of Applied Physics

Volumn 79, Issue 5, 1996, Pages 2675-2683

  Chen, G D ^a,c   Smith, M ^a   Lin, J Y ^a   Jiang, H X ^a   Salvador, A ^b   Sverdlov, B N ^b   Botchkarv, A ^b   Morkoc, H ^b  

^a KANSAS STATE UNIVERSITY   (United States)

^b University of Illinois at Urbana Champaign   (United States)

^c XI'AN JIAOTONG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; CALCULATIONS; ELECTRON TRANSITIONS; EMISSION SPECTROSCOPY; EXCITONS; IMPURITIES; MOLECULAR BEAM EPITAXY; NITROGEN; PHOTOLUMINESCENCE; PLASMA APPLICATIONS; TEMPERATURE MEASUREMENT; THERMAL EFFECTS;

BAND EDGE TRANSITIONS; BAND TO IMPURITY TRANSITIONS; EMISSION ENERGY; EMISSION INTENSITY; GALLIUM NITRIDE; RECOMBINATION LIFETIMES;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0030107466     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.361138     Document Type: Article

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