Power and linearity characteristics of field-plated recessed-gate AlGaN-GaN HEMTs

IEEE Electron Device Letters

Volumn 25, Issue 5, 2004, Pages 229-231

  Chini, A ^a   Buttari, D ^a   Coffie, R ^a   Shen, L ^a   Heikman, S ^a   Chakraborty, A ^a   Keller, S ^a   Mishra, U K ^a  

^a University of California   (United States)

Author keywords

GaN; High electron mobility transistors (HEMTs); Microwave power field effect transistors (FETs)

Indexed keywords

GALLIUM NITRIDE; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON CARBIDE; SUBSTRATES;

LINEARITY; MICROWAVE POWER FIELD EFFECT TRANSISTOR;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 2442493123     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2004.826525     Document Type: Letter

References (8)

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