SCOPUS 정보 검색 플랫폼

Nanoscale

Volumn 6, Issue 11, 2014, Pages 5698-5702

Multi-level control of conductive nano-filament evolution in HfO 2 ReRAM by pulse-train operations

(8) Zhao, L a Chen, H Y a Wu, S C b Jiang, Z a Yu, S c Hou, T H b Wong, H S Philip a Nishi, Y a

a Stanford University (United States)

b NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

c AZ 85281 (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HAFNIUM OXIDES; NANOSTRUCTURES;

3-BIT PER CELL; CONDUCTIVE FILAMENTS; ELECTRICAL MANIPULATION; NANOSCALE DEFECTS; OPERATION SCHEMES; PULSE AMPLITUDE; RELATIVE STANDARD DEVIATIONS; RESISTANCE LEVEL;

LEVEL CONTROL;

EID: 84901049640 PISSN: 20403364 EISSN: 20403372 Source Type: Journal
DOI: 10.1039/c4nr00500g Document Type: Article

Times cited : (148)

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