Nanoscale RRAM-based synaptic electronics: Toward a neuromorphic computing device

Nanotechnology

Volumn 24, Issue 38, 2013, Pages

  Park, Sangsu ^a   Noh, Jinwoo ^a   Choo, Myung Lae ^a   Sheri, Ahmad Muqeem ^a   Chang, Man ^c   Kim, Young Bae ^c   Kim, Chang Jung ^c   Jeon, Moongu ^a   Lee, Byung Geun ^a   Lee, Byoung Hun ^a   Hwang, Hyunsang ^b  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^c Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; LEARNING CAPABILITIES; LOW-POWER CONSUMPTION; NANOSCALE DIMENSIONS; NEUROMORPHIC CIRCUITS; NEUROMORPHIC COMPUTING; RESISTIVE RANDOM-ACCESS MEMORY; RESISTIVE SWITCHING DEVICES;

NETWORKS (CIRCUITS); RANDOM ACCESS STORAGE;

NANOTECHNOLOGY;

SILICON;

ARTICLE; ARTIFICIAL NEURAL NETWORK; BIOLOGICAL MODEL; ELECTRONICS; EQUIPMENT; NANOTECHNOLOGY; SYNAPSE; DEVICES;

ELECTRONICS; MODELS, NEUROLOGICAL; NANOTECHNOLOGY; NEURAL NETWORKS (COMPUTER); SILICON; SYNAPSES;

EID: 84883524945     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/24/38/384009     Document Type: Article

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