Multi-level switching of triple-layered TaOx RRAM with excellent reliability for storage class memory

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2012, Pages 71-72

  Lee, Seung Ryul ^a   Kim, Young Bae ^a   Chang, Man ^a   Kim, Kyung Min ^a   Lee, Chang Bum ^a   Hur, Ji Hyun ^a   Park, Gyeong Su ^a   Lee, Dongsoo ^a   Lee, Myoung Jae ^a   Kim, Chang Jung ^a   Chung, U In ^a   Yoo, In Kyeong ^a   Kim, Kinam ^a  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

MLC; multi level cell; nonvolatile memory; resistive switching; RRAM

Indexed keywords

MLC; MULTILEVEL CELL; NON-VOLATILE MEMORIES; RESISTIVE SWITCHING; RRAM;

COMPUTER SIMULATION; SCHOTTKY BARRIER DIODES; TANTALUM COMPOUNDS;

RANDOM ACCESS STORAGE;

EID: 84866546933     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.2012.6242466     Document Type: Conference Paper

References (4)

1. Y. B. Kim et al., Symp. VLSI Tech, p.52 (2011)
2. M. J. Lee et al., Nature Mater. 10, 625 (2011)
3. S. S. Shen et al., ISSCC, p.200-202 (2011)
4. J. H. Hur et al., Phys. Rev. B 82, 155321 (2010)