Highly uniform resistive switching properties of amorphous InGaZnO thin films prepared by a low temperature photochemical solution deposition method

ACS Applied Materials and Interfaces

Volumn 6, Issue 7, 2014, Pages 5012-5017

  Hu, Wei ^a   Zou, Lilan ^a   Chen, Xinman ^b   Qin, Ni ^a   Li, Shuwei ^a   Bao, Dinghua ^a  

^a SUN YAT SEN UNIVERSITY   (China)

^b SOUTH CHINA NORMAL UNIVERSITY   (China)

Author keywords

InGaZnO; photochemical solution deposition; resistive switching; RRAM; thin film

Indexed keywords

FIELD EMISSION MICROSCOPES; HYDROGEN BONDS; INFRARED SPECTROSCOPY; PHOTOELECTRONS; SCANNING ELECTRON MICROSCOPY; SWITCHING; SWITCHING SYSTEMS; TEMPERATURE; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

CHEMICAL SOLUTION DEPOSITION; ELECTRICAL CONDUCTION MECHANISMS; FIELD EMISSION SCANNING ELECTRON MICROSCOPY; INGAZNO; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE SWITCHING; RRAM; SOLUTION DEPOSITION;

DEPOSITION;

EID: 84898432115     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am500048y     Document Type: Article

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