Hydrogenated IGZO thin-film transistors using high-pressure hydrogen annealing

IEEE Transactions on Electron Devices

Volumn 60, Issue 8, 2013, Pages 2537-2541

  Oh, Se I ^a   Choi, Godeuni ^a,b   Hwang, Hyunsang ^a,b   Lu, Wu ^a   Jang, Jae Hyung ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

Amorphous indium gallium zincoxide thin film transistors (a IGZO TFTs); high pressure annealing; hydrogenation

Indexed keywords

AS-GROWN FILMS; ELECTRICAL CHARACTERISTIC; HIGH PRESSURE HYDROGEN; HIGH-PRESSURE ANNEALING; IGZO TFTS; SATURATION FIELDS; SUBTHRESHOLD SLOPE; THIN-FILM TRANSISTOR (TFTS);

ANNEALING; ELECTRIC FIELD EFFECTS; GALLIUM; HYDROGEN; HYDROGENATION; INDIUM; SEMICONDUCTING INDIUM COMPOUNDS;

THIN FILM TRANSISTORS;

EID: 84880879609     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2013.2265326     Document Type: Article

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