SCOPUS 정보 검색 플랫폼

Volumn 102, Issue 16, 2013, Pages

Switchable Schottky diode characteristics induced by electroforming process in Mn-doped ZnO thin films

(9) Nam, Yoonseung a Hwang, Inrok a Oh, Sungtaek a Lee, Sangik a Lee, Keundong a Hong, Sahwan a Kim, Jinsoo a Choi, Taekjib b Ho Park, Bae a

a Konkuk University (South Korea)

b Sejong University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTING FILAMENT; DIODE CHARACTERISTICS; HIGH-RESISTANCE STATE; MN-DOPED ZNO THIN FILMS; RECTIFYING BEHAVIORS; RESISTIVE SWITCHING; SCHOTTKY BARRIERS; SCHOTTKY DIODES;

CATHODES; CURVE FITTING; ELECTROCHEMISTRY; ELECTROFORMING; ELECTROMETALLURGY; MANGANESE; MANGANESE OXIDE; SCHOTTKY BARRIER DIODES;

ZINC OXIDE;

EID: 84876998846 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4803088 Document Type: Article

Times cited : (22)

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