Colossal resistance switching effect in Pt/spinel-MgZnO/Pt devices for nonvolatile memory applications

Applied Physics Letters

Volumn 94, Issue 3, 2009, Pages

  Chen, Xinman ^a   Wu, Guangheng ^a   Jiang, Peng ^a   Liu, Weifang ^a   Bao, Dinghua ^a  

^a SUN YAT SEN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

PLATINUM; SEMICONDUCTING ORGANIC COMPOUNDS; SIGNAL TO NOISE RATIO; SWITCHING SYSTEMS; THIN FILMS;

HIGH-RESISTANCE STATE; LOW-RESISTANCE STATE; MATERIAL SYSTEMS; MEMORY STATE; METAL OXIDES; MG CONTENTS; MGZNO THIN FILMS; NON-VOLATILE MEMORY APPLICATIONS; ORDERS OF MAGNITUDES; ORGANIC MOLECULES; POLYCRYSTALLINE SPINELS; PT ELECTRODES; RESET VOLTAGES; RESISTANCE RATIOS; RESISTANCE SWITCHING; RESISTANCE SWITCHING EFFECTS; SIGNAL-TO-NOISE RATIOS; THIN FILM SYSTEMS;

SWITCHING;

EID: 58849156576     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3073858     Document Type: Article

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