Application of supercritical C O2 fluid for dielectric improvement of Si Ox film

Electrochemical and Solid-State Letters

Volumn 12, Issue 2, 2009, Pages

  Tsai, Chih Tsung ^a   Chang, Ting Chang ^b   Liu, Po Tsun ^c   Cheng, Yi Li ^c   Kin, Kon Tsu ^d   Huang, Fon Shan ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^d INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON DIOXIDE; ELECTRIC FIELDS; ETHANOL; OXIDES; OXYGEN; PASSIVATION; SILICA; SILICON COMPOUNDS; SUPERCRITICAL FLUID EXTRACTION;

CAPACITANCE VOLTAGES; ETHYL ALCOHOLS; HYSTERESIS EFFECTS; OXYGEN CONTENTS; SILICON OXIDES; SUPERCRITICAL; SUPERCRITICAL CARBON DIOXIDES;

SILICON;

EID: 57649152985     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3028217     Document Type: Article

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