Low-temperature passivation of amorphous-silicon thin-film transistors with supercritical fluids

IEEE Electron Device Letters

Volumn 28, Issue 7, 2007, Pages 584-586

  Tsai, Chih Tsung ^a   Liu, Po Tsun ^b   Chang, Ting Chang ^c   Wang, Chen Wen ^b   Yang, Po Yu ^b   Yeh, Fon Shah ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

Author keywords

Amorphous silicon thin film transistors (a Si:H TFTs); Density of states (DOSs); Fluids technology; Supercritical CO2 (SCCO2)

Indexed keywords

AMORPHOUS-SILICON THIN-FILM TRANSISTORS; DENSITY OF STATES; PROPYL ALCOHOL;

AMORPHOUS SEMICONDUCTORS; DIFFUSION; LOW TEMPERATURE EFFECTS; SUPERCRITICAL FLUIDS; SURFACE ACTIVE AGENTS; THRESHOLD VOLTAGE;

THIN FILM TRANSISTORS;

EID: 34447259855     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.897869     Document Type: Article

References (17)

1. T. Tanaka, H. Asuma, K. Ogawa, Y. Shinagawa, K. Ono, and N. Konishi, "An LCD addressed by a-Si:H TFTs with peripheral poly-Si TFT circuits," in IEDM Tech. Dig., 1993, pp. 389-392.
2. Y. He, R. Hattori, and J. Kanicki, "Current-source a-Si:H thin-film transistor circuit for active-matrix organic light-emitting displays," IEEE Electron Device Lett., vol. 21, no. 12, pp. 590-592, Dec. 2000.
3. C. S. Yang, L. L. Smith, C. B. Arthur, and G. N. Parsons, "Stability of low-temperature amorphous-silicon thin film transistors formed on glass and transparent plastic substrates," J. Vac. Sci. Technol. B, Microelectron. Process. Phenom., vol. 18, no. 2, pp. 683-689, Mar. 2000.
4. H. C. Cheng, F. S. Wang, and C. Y. Huang, "Effects of NH3 plasma passivation on N-channel polycrystalline silicon thin-film transistors," IEEE Trans. Electron Devices, vol. 44, no. 1, pp. 64-68, Jan. 1997.
5. 2-plasma treatment on the characteristics of polysilicon thin-film transistors," IEEE Trans. Electron Devices, vol. 40, no. 12, pp. 2301-2306, Dec. 1993.
6. 2O vapor," Jpn. J. Appl. Phys., vol. 37, pt. 2, no. 2A, pp. L112-L114, Feb. 1998.
7. M. Kunii, "Evaluation of electrical characteristics and trap-state density in bottom-gate polycrystalline thin film transistors processed with highpressure water vapor annealing," Jpn. J. Appl. Phys., vol. 45, no. 2A, pp. 660-665, Feb. 2006.
8. K. Kitahara, K. Ohnishi, Y. Katoh, R. Yamazaki, and T. Kurosawa, "Analysis of defects in polycrystalline silicon thin films using Raman scattering spectroscopy," Jpn. J. Appl. Phys., vol. 42, pt. 1, no. 11, pp. 6742-6747, Nov. 2003.
9. 2 properties and silicon surface passivation by heat treatment with high-pressure H2O vapor," Jpn. J. Appl. Phys., vol. 37, pt. 2, no. 12A, pp. L1452-L1454, Dec. 1998.
10. 2 applications in microelectronics processing," Microelectron. Eng. vol. 65, no. 1/2, pp. 145-152, Jan. 2003.
11. S. Ogawa, T. Nasuno, M. Egami, and A. Nakashima, "Formation of mechanically strong low-k film using supercritical fluid dry technology," in Proc. IEEE Int. Interconnect Technol. Conf., 2002, pp. 220-222.
12. P. T. Liu, C. T. Tsai, T. C. Chang, K. T. Kin, P. L. Chang, C. M. Chen, and H. F. Cheng, "Activation of carbon nanotube emitters by using supercritical carbon dioxide fluids with propyl alcohol," Electrochem. Solid-State Lett., vol. 9, no. 4, pp. G124-G126, Feb. 2006.
13. T. Fukuda and H. Yanazawa, "A novel method of removing impurities from multilevel interconnect materials," Jpn. J. Appl. Phys., vol. 43, no. 3, pp. 936-939, Mar. 2004.
14. P. Servati and A. Nathan, "Modeling of the static and dynamic behavior of hydrogenated amorphous-silicon thin-film transistors," J. Vac. Sci. Technol. A, Vac. Surf. Films, vol. 20, no. 3, pp. 1038-1042, May/ Jun. 2002.
15. M. Powell, "The physics of amorphous-silicon thin-film transistors," IEEE Trans. Electron Devices, vol. 36, no. 12, pp. 2753-2763, Dec. 1989.
16. P. Servati and A. Nathan, "Modeling of the reverse characteristics of a-Si:H TFTs," [iIEEE Trans. Electron Devices, vol. 49, no. 5, pp. 812-819, May 2002.
17. T. Globus, H. C. Slade, M. S. Shur, and M. Hack, "Density of deep bandgap states in amorphous-silicon from the temperature dependence of thin film transistor current," in [iProc. Mater. Res. Soc., 1994, vol. 336, p. 823.