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Volumn 2006, Issue , 2006, Pages 448-454

A 55 kW three-phase inverter with Si IGBTs and SiC schottky diodes

Author keywords

[No Author keywords available]

Indexed keywords

AUTOMOTIVE INVERTER; CIRCUIT SIMULATORS; POWER CONVERTER EFFICIENCY; SILICON CARBIDE (SIC) POWER DEVICES;

EID: 33749519667     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (20)

References (15)
  • 1
    • 0036446255 scopus 로고    scopus 로고
    • Testing, characterization, and modeling of SiC diodes for transportation applications
    • June 23-27, Cairns, Australia
    • B. Ozpineci, L. M. Tolbert, S. K. Islam, F. Z. Peng, "Testing, characterization, and modeling of SiC diodes for transportation applications," IEEE Power Electronics Specialists Conference, June 23-27, 2002, Cairns, Australia, pp. 1673-1678.
    • (2002) IEEE Power Electronics Specialists Conference , pp. 1673-1678
    • Ozpineci, B.1    Tolbert, L.M.2    Islam, S.K.3    Peng, F.Z.4
  • 2
    • 33745010097 scopus 로고    scopus 로고
    • Impact of SiC power electronic devices for hybrid electric vehicles
    • June 3-5, Arlington, Virginia. (SAE paper number 2002-01-1904)
    • L. M. Tolbert, B. Ozpineci, S. K. Islam F. Z. Peng, "Impact of SiC power electronic devices for hybrid electric vehicles," 2002 Future Car Congress Proceedings, June 3-5, 2002, Arlington, Virginia. (SAE paper number 2002-01-1904).
    • (2002) 2002 Future Car Congress Proceedings
    • Tolbert, L.M.1    Ozpineci, B.2    Islam, S.K.3    Peng, F.Z.4
  • 3
    • 33749507161 scopus 로고    scopus 로고
    • http://powerelectronics.com/mag/408pet20_web.pdf.
  • 7
    • 2342476450 scopus 로고    scopus 로고
    • A novel SiC J-FET gate drive circuit for sparse matrix converter applications
    • 22-26 February
    • M. L. Heldwein, J. W. Kolar, "A novel SiC J-FET gate drive circuit for sparse matrix converter applications," IEEE Applied Power Electronics Conference, vol. 1, 22-26 February 2004, pp. 116 - 121.
    • (2004) IEEE Applied Power Electronics Conference , vol.1 , pp. 116-121
    • Heldwein, M.L.1    Kolar, J.W.2
  • 8
    • 0026940017 scopus 로고
    • Silicon carbide high voltage (400V) Schottky barrier diodes
    • October
    • M. Bhatnagar, P. K. McLarty, B. J. Baliga, "Silicon carbide high voltage (400V) Schottky barrier diodes," IEEE Electron Device Letters, vol. 13, no. 10, October 1992, pp. 501-503.
    • (1992) IEEE Electron Device Letters , vol.13 , Issue.10 , pp. 501-503
    • Bhatnagar, M.1    McLarty, P.K.2    Baliga, B.J.3
  • 15
    • 33749514226 scopus 로고    scopus 로고
    • Ph.D. Dissertation, Department of Electrical Engineering, University of Arkansas, Fayetteville, Arkansas
    • T. R. McNutt, "Modeling and Characterization of Silicon Carbide Power Devices," Ph.D. Dissertation, Department of Electrical Engineering, University of Arkansas, Fayetteville, Arkansas, 2004.
    • (2004) Modeling and Characterization of Silicon Carbide Power Devices
    • McNutt, T.R.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.