Comparison of static and switching characteristics of 1200 V 4H-SiC BJT and 1200 V Si-IGBT

IEEE Transactions on Industry Applications

Volumn 44, Issue 3, 2008, Pages 887-893

  Gao, Yan ^a   Huang, Alex Q ^b   Krishnaswami, Sumi ^c   Richmond, Jim ^c   Agarwal, Anant K ^c  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b NORTH CAROLINA STATE UNIVERSITY   (United States)

^c Arkansas Power Electronics International Inc   (United States)

Author keywords

Loss; Reverse biased safe operating area (RBSOA); Si insulated gate bipolar transistor (IGBT); Silicon carbide bipolar junction transistor (SiC BJT)

Indexed keywords

ELECTRIC POTENTIAL; INSULATED GATE BIPOLAR TRANSISTORS (IGBT); SILICON CARBIDE; STATIC ELECTRICITY;

BUS VOLTAGE; REVERSE-BIASED SAFE OPERATING AREA; SWITCHING LOSSES;

BIPOLAR TRANSISTORS;

EID: 44849097146     PISSN: 00939994     EISSN: None     Source Type: Journal    
DOI: 10.1109/TIA.2008.921408     Document Type: Article

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