Boost converter with SiC JFETs: Comparison with CoolMOS and tests at elevated case temperature

IEEE Transactions on Power Electronics

Volumn 28, Issue 4, 2013, Pages 1938-1945

  Guédon, Florent ^a   Singh, Santosh ^a,b   McMahon, Richard ^a   Udrea, Florin ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b BANARAS HINDU UNIVERSITY   (India)

Author keywords

Boost converter; CoolMOS; Elevated temperature; SiC junction field effect transistor (JFET)

Indexed keywords

EID: 84890240594     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2012.2201753     Document Type: Article

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