SiC wirebond multichip phase-leg module packaging design and testing for harsh environment

IEEE Transactions on Power Electronics

Volumn 25, Issue 1, 2010, Pages 16-23

  Ning, Puqi ^a   Lai, Rixin ^b   Huff, Daniel ^a   Wang, Fei ^a   Ngo, Khai D T ^a   Immanuel, Vikram D ^c   Karimi, Kamiar J ^c  

^a VIRGINIA POLYTECHNIC INSTITUTE AND STATE UNIVERSITY   (United States)

^b GENERAL ELECTRIC COMPANY   (United States)

^c BOEING COMPANY   (United States)

Author keywords

High temperature packaging; SiC devices

Indexed keywords

A-THERMAL; FEASIBLE SOLUTION; HARSH ENVIRONMENT; HIGH TEMPERATURE; HIGH-TEMPERATURE PACKAGING; JUNCTION TEMPERATURES; MODULE PACKAGING; MULTI-CHIP; POWER MODULE; SEALING MATERIAL; SIC DEVICES; TEMPERATURE EXCURSIONS; THERMAL RELIABILITY; THERMOMECHANICAL RELIABILITY; WIREBOND;

CHIP SCALE PACKAGES; RELIABILITY; SILICON CARBIDE;

PACKAGING;

EID: 76649133450     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2009.2027324     Document Type: Article

References (26)

1. C. Rebbereh, H. Schierling, and M. Braun, "First Inverter using silicon carbide power switches only," presented at the 9th Eur. Conf. Power Electron. Appl. (EPE 2003), Toulouse, France.
2. H. R. Chang, E. Hanna, and A. V. Radun, "Demonstration of silicon carbide (SiC)-based motor drive," in Proc. IEEE Ind. Electron. Soc. (IECON 2003), vol.2, pp. 1116-1121.
3. J. Richmond, S. Ryu, M. Das, and S. Krishnaswami, "An overview of Cree silicon carbide power devices," in Proc. 2004 IEEEWorkshop Power Electron. Transp., pp. 37-42.
4. F. C. Lee, S. Wang, P. Kong, C. Wang, and D. Fu, "Power architecture design with improved system efficiency, EMI and power density," in Proc. IEEE PESC, 2008.
5. D. Fu, Y. Liu, F. C. Lee, and M. Xu, "A novel driving scheme for synchronous rectifiers (SR) for LLC resonant converters," IEEE Trans. Power Electron. 2009.
6. D. Fu, B. Lu, and F. C. Lee, "1 MHz high efficiency LLC resonant converters with synchronous rectifier," in Proc. IEEE PESC, 2007.
7. Y. Qiu, B. Lu, B. Yang, D. Fu, and F. C. Lee, "A high-frequency highefficiency three-level LCC converter for high-voltage charging applications," in Proc. IEEE PESC, 2004.
8. D. Fu, F. C. Lee, Y. Liu, and M. Xu, "Novel multi-element resonant converters for front-end DC/DC converters," in Proc. IEEE PESC, 2080.
9. D.Huang, D. Fu, and F. C. Lee, "High switching frequency, high efficiency CLL resonant converter with synchronous rectifier," in Proc. IEEE ECCE, 2009.
10. D. Fu, P. Kong, S. Wang, F. C. Lee, and M. Xu, "Analysis and suppression of conducted EMI emissions for front-end LLC resonant DC/DC converters," in Proc. IEEE PESC, 2008.
11. D. Fu, Y. Liu, F. C. Lee, and M. Xu, "An improved novel driving scheme of synchronous rectifiers for LLC resonant converters," in Proc. IEEE APEC, 2008.
12. J. Hornberger, A. Lostetter, T. McNutt, S. M. Lal, and A. Mantooth, "The application of silicon-carbide (SiC) semiconductor power electronics to extreme high-temperature extraterrestrial environments," in Proc. 2004 IEEE Aerosp. Conf., Mar., pp. 2538-2555.
13. J. Hornberger, S. Mounce, R. Schupbach, B. McPherson, H. Mustain, A. Mantooth, W. Brown, and A. B. Lostetter, "High-temperature integration of silicon carbide (SiC) and silicon-on-insulator (SOI) electronics in multichip power modules (MCPMs)," presented at the 11th Eur. Conf. Power Electron. Appl. (EPE 2005), Dresden, Germany.
14. S. Mounce, B. McPherson, R. Schupbach, and A. B. Lostetter, "Ultralightweight, high efficiency SiC based power electronic converters for extreme environments," in Proc. 2006 IEEE Aerosp. Conf., New York, pp. 1-19.
15. E. Cilio, J. Hornberger, B. McPherson, R. Schupbach, A. Lostetter, and J. Garrett, "A novel high density 100 kW three-phase silicon carbide (SIC) multichip power module (MCPM) inverter," in Proc. IEEE APEC 2007, Anaheim, CA, pp. 666-672.
16. T. Funaki, J. C. Balda, J. Junghans, A. S. Kashyap, H. A. Mantooth, F. Barlow,T.Kimoto, andT.Hikihara, "Power conversion with SiC devices at extremely high ambient temperatures," IEEE Trans. Power Electron., vol.22, no.4, pp. 1321-1329, Jul. 2007.
17. B. Ray, H. Kosai, J. D. Scofield, and B. Jordan, "200C operation of a DC-DC converter with SiC power devices," in Proc. IEEE APEC 2007, Anaheim, CA, pp. 998-1002.
18. L. Casey, G. Davis, B. Borowy, and J. Connell, "High temperature considerations in SiC power converter design," in Proc. IMAPS HiTEC 2006, pp. 108-117.
19. Z. J. Shen, B. Grummel, R. McClure, A. Gordon, and A. Hefner, "High temperature, high power module design for wide bandgap semiconductors: Packaging architecture and materials considerations," in Proc. IMAPS HiTEC 2008, Albuquerque, NM, pp. 170-176.
20. L. Coppola, D. Huff, F. Wang, R. Burgos, and D. Boroyevich, "Survey on high-temperature packaging materials for SiC-based power electronics modules," in Proc. IEEE PESC 2007, Orlando, FL, pp. 2234-2240.
21. P. Ning, R. Lai, D. Huff, F. Wang, and K. D. T. Ngo, "250 C SiC power module package design," in Proc. SAE PSC 2008, Seattle, WA, pp. 217- 223.
22. J. Schulz-Harder and K. Exel, "Recent developments of direct bonded copper (DBC) substrates for power modules," in Proc. IEEE ICEPT 2003, Shanghai, China, pp. 491-496.
23. D. C. Katsis andY. Zheng, "Development of an extreme temperature range silicon carbide power module for aerospace applications," in Proc. IEEE PESC 2008, pp. 290-294.
24. S. Kulkarni, F. Barlow, A. Elshabini, and R. Edgeman, "SiC and GaN die attach for extreme environment electronics," in Proc. IMAPS 2008, pp. 1119-1125.
25. K. Sano, K. Hayashi, H. Kawafuji, and N. Funakoshi, "Ultra-small compact transfer molded package for power modules," in Proc. IEEE ECTC 2008, pp. 1832-1837.
26. Integrated Circuit Thermal MeasurementMethod-Electrical TestMethod (Single Semiconductor Device), JEDEC Standard 51-61, 1997.