10-kV SiC MOSFET-Based Boost Converter

IEEE Transactions on Industry Applications

Volumn 45, Issue 6, 2009, Pages 2056-2063

  Wang, Jun ^a   Zhou, Xiaohu ^a   Li, Jun ^a   Zhao, Tiefu ^a   Huang, Alex Q ^a   Callanan, Robert ^b   Husna, Fatima ^b   Agarwal, Anant ^b  

^a North Carolina State University   (United States)

^b Arkansas Power Electronics International Inc   (United States)

Author keywords

Boost converter; high frequency; high temperature; junction barrier Schottky (JBS) diode; loss; MOSFET; silicon carbide (SiC)

Indexed keywords

EID: 85008024856     PISSN: 00939994     EISSN: 19399367     Source Type: Journal    
DOI: 10.1109/TIA.2009.2031915     Document Type: Article

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