Evaluation of high frequency switching capability of SiC Schottky barrier diode, based on junction capacitance model

IEEE Transactions on Power Electronics

Volumn 23, Issue 5, 2008, Pages 2602-2611

  Funaki, Tsuyoshi ^a   Kimoto, Tsunenobu ^a   Hikihara, Takashi ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

Capacitance voltage characteristics; Fevice modeling; Operation criterion; SiC Schottky barrier diode

Indexed keywords

CAPACITANCE; DIODES; ELECTRIC CONDUCTIVITY; ELECTRIC EQUIPMENT; ELECTRIC RECTIFIERS; HETEROJUNCTION BIPOLAR TRANSISTORS; HIGH TEMPERATURE OPERATIONS; IONIZATION OF GASES; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DIODES; SILICON; SILICON CARBIDE; SWITCHING; TELECOMMUNICATION NETWORKS;

AC VOLTAGES; CAPACITANCE VOLTAGES; CAPACITANCE-VOLTAGE CHARACTERISTICS; CIRCUIT DESIGNS; DC CURRENTS; DEVICE PARAMETERS; DEVICE STRUCTURES; DYNAMIC BEHAVIORS; FAST SWITCHING; FEVICE MODELING; HIGH BREAKDOWN VOLTAGES; HIGH FREQUENCY AC; HIGH FREQUENCY SWITCHING; HIGH TEMPERATURES; JUNCTION CAPACITANCES; OPERATION CRITERION; PERFORMANCE CRITERIONS; POWER DEVICES; PUNCH-THROUGH; RATED VOLTAGES; SCHOTTKY BARRIERS; SEMICONDUCTOR PHYSICS; SIC SCHOTTKY BARRIER DIODE; SINUSOIDAL VOLTAGES; SWITCHING CAPABILITIES; SWITCHING OPERATIONS; WAVE RECTIFICATIONS; WIDE FREQUENCY RANGES;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 57349196349     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2008.2002096     Document Type: Article

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