Improved performance of graphene transistors by strain engineering

Nanotechnology

Volumn 25, Issue 16, 2014, Pages

  Nguyen, V Hung ^a,b   Nguyen, Huy Viet ^b   Dollfus, P ^c  

^a CEA GRENOBLE   (France)

^b INSTITUTE OF PHYSICS   (Viet Nam)

^c UNIV PARIS SUD   (France)

Author keywords

fieldeffecttransistor; grapheme; simulation; strain

Indexed keywords

FIELD EFFECT TRANSISTORS; HETEROJUNCTIONS; STRAIN;

CURRENT RECTIFICATIONS; GRAPHEME; GRAPHENE FIELD-EFFECT TRANSISTORS; GRAPHENE TRANSISTORS; NEGATIVE DIFFERENTIAL CONDUCTANCE; SIMULATION; STRAIN-INDUCED DEFORMATION; TRANSITION FREQUENCIES;

GRAPHENE;

EID: 84897409740     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/25/16/165201     Document Type: Article

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