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Volumn 13, Issue 4, 2013, Pages 1446-1450

Electronic and transport properties of unbalanced sublattice N-doping in graphene

Author keywords

ab initio; band gap; electronic transport; Graphene FET; nitrogen doping; tight binding

Indexed keywords

AB INITIO; ASYMMETRIC TRANSPORT; ELECTRONIC TRANSPORT; NITROGEN-DOPED GRAPHENE; NITROGEN-DOPING; RANDOM DISTRIBUTION; SUBLATTICE SYMMETRY; TIGHT BINDING;

EID: 84876014564     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl304351z     Document Type: Article
Times cited : (123)

References (47)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.