Record high RF performance for epitaxial graphene transistors

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2011, Pages

  Wu, Y Q ^a   Farmer, D B ^a   Valdes Garcia, A ^a   Zhu, W J ^a   Jenkins, K A ^a   Dimitrakopoulos, C ^a   Avouris, Ph ^a   Lin, Y M ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CUT-OFF; EPITAXIAL GRAPHENE; HIGH OUTPUT; POWER GAINS; RF PERFORMANCE; VOLTAGE GAIN;

ELECTRON DEVICES; EPITAXIAL GROWTH; GATE DIELECTRICS; MESFET DEVICES;

GRAPHENE;

EID: 84863022032     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2011.6131601     Document Type: Conference Paper

References (11)

1. J. S. Moon et al., IEEE Electron Device Lett. 30, 650-652 (2009).
2. Y.Q. Wu et al., Tech. Dig. IEDM 226-228 (2010).
3. J. Lee et al., Tech. Dig. IEDM 568-571 (2010).
4. S.-J. Han et al., Nano Lett ASAP, DOI: 10.1021/nl2016637 (2011)
5. L. Liao et al., Nano Lett ASAP, DOI: 10.1021/nl201922c (2011)
6. Y.-M. Lin et al., Science 327, 662 (2010).
7. Y.Q. Wu et al., Nature 472, 74-78 (2011).
8. F. Schwierz, Nature 472, 41-42 (2011).
9. Y.-M. Lin et al., Science 332, 1294-1297 (2011).
10. W.J. Zhu et al., Nano Lett 10, 3572-3576 (2010)
11. D.B. Farmer et al., Appl. Phys. Letts. 94, 213106 (2009)