Impact of gate resistance in graphene radio frequency transistors

Applied Physics Letters

Volumn 101, Issue 14, 2012, Pages

  Farmer, Damon B ^a   Valdes Garcia, Alberto ^a   Dimitrakopoulos, Christos ^a   Avouris, Phaedon ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT GAIN CUTOFF FREQUENCY; DEVICE CHANNEL; DEVICE-SCALING; GATE RESISTANCE; GRAPHENE TRANSISTORS; HIGH FREQUENCY DEVICES; OUTPUT CONDUCTANCE; PARASITIC RESISTANCES; POWER GAIN CUTOFF FREQUENCIES; RADIO FREQUENCY TRANSISTORS; RELATIVE RATES;

HETEROJUNCTION BIPOLAR TRANSISTORS; HIGH ELECTRON MOBILITY TRANSISTORS;

GRAPHENE;

EID: 84867555047     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4757422     Document Type: Article

References (20)

1. K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jaing, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, and A. A. Firsov, Science 306, 666 (2004). 10.1126/science.1102896
2. A. H. C. Neto, F. Guinea, N. M. R. Peres, K. S. Novoselov, and A. K. Geim, Rev. Mod. Phys. 81, 109 (2009). 10.1103/RevModPhys.81.109
3. Y. Wu, K. A. Jenkins, A. Valdes-Garcia, D. B. Farmer, Y. Zhu, A. A. Bol, C. Dimitrakopoulos, W. Zhu, F. Xia, Ph. Avouris, and Y.-M. Lin, Nano Lett. 12, 3062 (2012). 10.1021/nl300904k
4. Y.-M. Lin, A. Valdes-Garcia, S.-J. Han, D. B. Farmer, I. Meric, Y. Sun, Y. Wu, C. Dimitrakopoulos, A. Grill, Ph. Avouris, and K. A. Jenkins, Science 332, 1294 (2011). 10.1126/science.1204428
5. H. Wang, D. Nezich, J. Kong, and T. Palacios, IEEE Electron Device Lett. 30, 547 (2009). 10.1109/LED.2009.2016443
6. F. Schwierz and J. J. Liou, Modern Microwave Transistors: Theory, Design, and Performance (Wiley-Interscience, 2003).
7. C. Rutherglen, D. Jain, and P. Burke, Nat. Nanotechnol. 4, 811 (2009). 10.1038/nnano.2009.355
8. I. Meric, C. R. Dean, S.-J. Han, L. Wang, K. A. Jenkins, J. Hone, and K. L. Shepard, IEDM Tech. Dig. 2011, 15. 10.1109/IEDM.2011.6131472
9. Y. Wu, D. B. Farmer, A. Valdes-Garcia, W. Zhu, K. A. Jenkins, C. Dimitrakopoulos, Ph. Avouris, and Y.-M. Lin, IEDM Tech. Dig. 2011, 528. 10.1109/IEDM.2011.6131601
10. I. Meric, M. Y. Han, A. F. Young, B. Ozyilmaz, P. Kim, and K. L. Shepard, Nat. Nanotechnol. 3, 654 (2008). 10.1038/nnano.2008.268
11. J. Bai, L. Liao, H. Zhou, R. Cheng, L. Liu, Y. Huang, and X. Duan, Nano Lett. 11, 2555 (2011). 10.1021/nl201331x
12. F. Xia, V. Perebeinos, Y.-M. Lin, Y. Wu, and Ph. Avouris, Nat. Nanotech. 6, 179 (2011). 10.1038/nnano.2011.6
13. Y.-M. Lin, C. Dimitrakopoulos, K. A. Jenkins, D. B. Farmer, H.-Y. Chiu, A. Grill, and Ph. Avouris, Science 327, 662 (2010). 10.1126/science.1184289
14. D. B. Farmer and R. G. Gordon, Nano Lett. 6, 699 (2006). 10.1021/nl052453d
15. J. R. Williams, L. DiCarlo, and C. M. Marcus, Science 317, 638 (2007). 10.1126/science.1144657
16. C. Dimitrakopoulos, Y.-M. Lin, A. Grill, D. B. Farmer, M. Freitag, Y. Sun, S.-J. Han, Z. Chen, K. A. Jenkins, Y. Zhu, Z. Liu, T. J. McArdle, J. A. Ott, R. Wisnieff, and Ph. Avouris, J. Vac. Sci. Technol. B 28, 985 (2010). 10.1116/1.3480961
17. D. B. Farmer, Y.-M. Lin, and Ph. Avouris, Appl. Phys. Lett. 97, 013103 (2010). 10.1063/1.3459972
18. B. Razavi, R.-H. Yan, and K. F. Lee, IEEE Trans. Circuits, Syst., I 41, 750 (1994). 10.1109/81.331530
19. M. S. Gupta, IEEE Trans. Microwave Theory Tech. 40, 864 (1992). 10.1109/22.137392
20. A. L. des Etangs-Levallois, E. Dubois, M. Lesecq, F. Danneville, L. Poulain, Y. Tagro, S. Lepilliet, D. Gloria, C. Raynaud, and D. Troadec, IEEE Electron Device Lett. 32, 1510 (2011). 10.1109/LED.2011.2166241