Pseudosaturation and negative differential conductance in graphene field-effect transistors

IEEE Transactions on Electron Devices

Volumn 60, Issue 3, 2013, Pages 985-991

  Alarcon, Alfonso ^a   Nguyen, Viet Hung ^b,c   Berrada, Salim ^a   Querlioz, Damien ^a   Saint Martin, Jérôme ^a   Bournel, Arnaud ^a   Dollfus, Philippe ^a  

^a CNRS   (France)

^b UNIV GRENOBLE ALPES   (France)

^c INSTITUTE OF PHYSICS   (Viet Nam)

Author keywords

Dirac point; graphene field effect transistor (GFET); negative differential conductance (NDC); short channel effect

Indexed keywords

BALLISTIC TRANSPORTS; BAND TO BAND TUNNELING; CURRENT OSCILLATION; CURRENT SATURATION; DEVICE PARAMETERS; DIRAC POINT; ELECTRICAL CHARACTERISTIC; GATE INSULATOR; GATE LENGTH; GRAPHENE FIELD-EFFECT TRANSISTORS; GRAPHENE FIELDEFFECT TRANSISTORS (GFET); GREEN'S FUNCTION APPROACHES; KLEIN TUNNELING; NEGATIVE DIFFERENTIAL CONDUCTANCE; POISSON'S EQUATION; SHORT-CHANNEL EFFECT; SIMULATION MODEL; TIGHT-BINDING HAMILTONIANS; TRANSFER CHARACTERISTICS; TRANSPORT BEHAVIOR;

COMPUTER SIMULATION; FIELD EFFECT TRANSISTORS; GRAPHENE; POISSON EQUATION;

HAMILTONIANS;

EID: 84874664728     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2013.2241766     Document Type: Article

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