Disorder effects on electronic bandgap and transport in graphene-nanomesh-based structures

Journal of Applied Physics

Volumn 113, Issue 1, 2013, Pages

  Hung Nguyen, V ^a,b   Chung Nguyen, M ^b   Nguyen, Huy Viet ^b   Dollfus, P ^c  

^a INAC   (France)

^b INSTITUTE OF PHYSICS   (Viet Nam)

^c UNIVERSITÉ PARIS SACLAY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT SATURATION; DISORDER EFFECT; ELECTRICAL PERFORMANCE; ELECTRONIC BAND GAPS; ELECTRONIC DEVICE; LATTICE ORIENTATIONS; LATTICE SYMMETRY; NANOMESH; NEGATIVE DIFFERENTIAL CONDUCTANCE; ON/OFF CURRENT RATIO; P-N JUNCTION; QUANTUM SIMULATIONS; SCALING RULES; SINGLE POTENTIAL BARRIERS; STRONG DISORDERS; TIGHT BINDING MODEL; TRANSPORT CHARACTERISTICS;

COMPUTER SIMULATION; CRYSTAL LATTICES; GRAPHENE; SEMICONDUCTOR JUNCTIONS;

QUANTUM CHEMISTRY;

EID: 84872056164     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4772609     Document Type: Article

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