Gate-controllable negative differential conductance in graphene tunneling transistors

Semiconductor Science and Technology

Volumn 27, Issue 10, 2012, Pages

  Nguyen, V Hung ^a,b   Niquet, Y M ^a   Dollfus, P ^c  

^a L Sim   (France)

^b GRADUATE UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Viet Nam)

^c UNIVERSITÉ PARIS SACLAY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DIGITAL OPERATION; ESAKI DIODE; GATE VOLTAGES; HIGH FREQUENCY HF; LOW POWER; NEGATIVE DIFFERENTIAL CONDUCTANCE; P-N JUNCTION; PEAK CURRENTS; PEAK-TO-VALLEY RATIOS; POTENTIAL PROFILES; SOURCE AND DRAINS; TRANSITION LENGTH; TRANSPORT CHARACTERISTICS;

DIGITAL CIRCUITS; FIELD EFFECT TRANSISTORS; SEMICONDUCTOR JUNCTIONS; TUNNEL DIODES;

GRAPHENE;

EID: 84866320563     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/27/10/105018     Document Type: Article

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